The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 31, 2010
Filed:
Jul. 30, 2007
Cyril Cabral, Jr., Mahopac, NY (US);
Chester T. Dziobkowski, Hopewell Junction, NY (US);
Sunfei Fang, LaGrangeville, NY (US);
Evgeni Gousev, Mahopac, NY (US);
Rajarao Jammy, Hopewell Junction, NY (US);
Vijay Narayanan, New York, NY (US);
Vamsi Paruchuri, New York, NY (US);
Ghavam G. Shahidi, Pound Ridge, NY (US);
Michelle L. Steen, Danbury, CT (US);
Clement H. Wann, Carmel, NY (US);
Cyril Cabral, Jr., Mahopac, NY (US);
Chester T. Dziobkowski, Hopewell Junction, NY (US);
Sunfei Fang, LaGrangeville, NY (US);
Evgeni Gousev, Mahopac, NY (US);
Rajarao Jammy, Hopewell Junction, NY (US);
Vijay Narayanan, New York, NY (US);
Vamsi Paruchuri, New York, NY (US);
Ghavam G. Shahidi, Pound Ridge, NY (US);
Michelle L. Steen, Danbury, CT (US);
Clement H. Wann, Carmel, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
An advanced gate structure that includes a fully silicided metal gate and silicided source and drain regions in which the fully silicided metal gate has a thickness that is greater than the thickness of the silicided source/drain regions is provided. A method of forming the advanced gate structure is also provided in which the silicided source and drain regions are formed prior to formation of the silicided metal gate region.