The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 31, 2010
Filed:
Dec. 30, 2008
Yun-seok Cho, Icheon-si, KR;
Yun-Seok Cho, Icheon-si, KR;
Hynix Semiconductor Inc., Gyeonggi-Do, KR;
Abstract
A method of fabricating a vertical channel transistor for a semiconductor device includes forming, on a substrate, a plurality of active pillars each having a gate electrode formed on and surrounding a lower portion thereof; forming a first insulation layer over the active pillars to fill a gap region between the active pillars; partially removing the first insulation layer to exposes a circumferential surface of the gate electrode in all directions, without exposing the substrate in the gap region between the active pillars; forming a conductive layer on the remaining first insulation layer to fill the gap region between the active pillars; and patterning the conductive layer to form a word line that surrounds and contacts the circumferential surface of the gate electrode in all directions.