The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 31, 2010
Filed:
Dec. 11, 2007
Sai-chang Liu, Kaohsiung County, TW;
Cheng-tzu Yang, Hsinchu County, TW;
Chien-wei Wu, Hsinchu County, TW;
Sai-Chang Liu, Kaohsiung County, TW;
Cheng-Tzu Yang, Hsinchu County, TW;
Chien-Wei Wu, Hsinchu County, TW;
Taiwan TFT LCD Association, Hsinchu, TW;
Chunghwa Picture Tubes, Ltd., Taipei, TW;
Au Optronics Corporation, Hsinchu, TW;
Hannstar Display Corporation, Tao-Yuan Hsien, TW;
Chi Mei Optoelectronics Corporation, Tainan County, TW;
Industrial Technology Research Institute, Hsinchu, TW;
TPO Display Corp., Miao-Li County, TW;
Abstract
A method for fabricating a thin film transistor (TFT) is provided. A substrate having a gate, a dielectric layer, a channel layer and an ohmic contact layer formed thereon is provided. Next, a metal layer is formed over the substrate covering the ohmic contact layer. Next, the metal layer and the ohmic contact layer are simultaneously etched by a wet etching process to form a source/drain and expose the channel layer. Because the wet etching process can be used to selectively etch the ohmic contact layer, damage to the underlying channel layer may be negligible. Thus, the reliability of the device may be promoted. Furthermore, the process may be simplified, the production yield and the throughput of TFT may be increased.