The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 31, 2010
Filed:
Oct. 13, 2006
Joon-seop Kwak, Kyungki-do, KR;
Kyoung-ho Ha, Seoul, KR;
Yoon-joon Sung, Kyungki-do, KR;
Samsung Electro-Mechanics Co., Ltd., Suwon, Kyungki-Do, KR;
Abstract
Provided are a semiconductor laser diode having a current confining layer and a method of fabricating the same. The semiconductor laser diode includes a substrate, a first material layer deposited on the substrate, an active layer which is deposited on the first material layer and emits a laser beam, and a second material layer which is deposited on the active layer and includes a ridge portion protruding from the active layer and a current confining layer formed by injection of ions into peripheral portions of the ridge portion so as to confine a current injected into the active layer. Therefore, it is possible to fabricate an improved semiconductor laser diode having a low-resonance critical current value that can remove a loss in an optical profile and reduce the profile width of a current injected into the active layer while maintaining the width of the ridge portion.