The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 24, 2010
Filed:
Dec. 07, 2007
Applicant:
Satoshi AE, Kanagawa, JP;
Inventor:
Satoshi Ae, Kanagawa, JP;
Assignee:
NEC Electronics Corporation, Kawasaki, Kanagawa, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01S 5/00 (2006.01);
U.S. Cl.
CPC ...
Abstract
A buried semiconductor laser exhibiting a reduced dislocation of a contact layer is achieved. A buried semiconductor laser, comprising: an n-type indium phosphide (InP) substrate; an active layer disposed on the n-type InP substrate; block layers provided so as to bilaterally disposed on both sides of the active layer; a clad layer provided so as to cover the active layer and the block layers; and a p-type gallium indium arsenide (InGaAs) contact layer provided on the clad layer, wherein the p-type InGaAs contact layer has a compressive strain.