The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 24, 2010
Filed:
May. 12, 2008
Jae Won Cha, Seoul, KR;
Sam Kyu Won, Yongin-si, KR;
IN Ho Kang, Seoul, KR;
Kwang Ho Baek, Seoul, KR;
Jae Won Cha, Seoul, KR;
Sam Kyu Won, Yongin-si, KR;
In Ho Kang, Seoul, KR;
Kwang Ho Baek, Seoul, KR;
Hynix Semiconductor Inc., Icheon-si, KR;
Abstract
A method of operating a flash memory device includes reading a first bit data by employing a first read voltage or a second read voltage higher than the first read voltage according to a program state of a first flag cell. The first flag cell is programmed when the first bit data is programmed into the MLC. A second bit data may be read by employing a third read voltage that is higher than the first read voltage or the second read voltage, or by employing the first read voltage and the third read voltage according to a program state of a second flag cell. The second flag cell is programmed when the second bit data is programmed into the MLC. Alternatively to reading the second bit data, the second bit data is fixed to a set data and the set data is output.