The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 24, 2010

Filed:

Apr. 30, 2007
Applicants:

John Vincent Reichl, Ellicott City, MD (US);

David Everett Bulgher, Gambrills, MD (US);

Ty R. Mcnutt, Columbia, MD (US);

Inventors:

John Vincent Reichl, Ellicott City, MD (US);

David Everett Bulgher, Gambrills, MD (US);

Ty R. McNutt, Columbia, MD (US);

Assignee:

Northrop Grumman Systems Corporation, Los Angeles, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H03K 17/687 (2006.01);
U.S. Cl.
CPC ...
Abstract

A gate drive circuit for a wide bandgap semiconductor junction gated transistor includes a gate current limit resistor. The gate current limit resistor is coupled to a gate input of the wide bandgap semiconductor junction gated transistor when in use and limits a gate current provided to the gate input of the junction gated transistor. An AC-coupled charging capacitor is also included in the gate drive circuit. The AC-coupled charging capacitor is coupled to the gate input of the wide bandgap semiconductor junction gated transistor when in use and is positioned parallel to the gate current limit resistor. A diode is coupled to the gate current limit resistor and the AC-coupled charging capacitor on one end and an output of a gate drive chip on the other end When in use, the diode lowers a gate voltage output from the gate drive chip applied to the gate input of the wide bandgap semiconductor junction gated transistor through the gate current limit resistor. The gate drive circuitry provides a small, efficient, and cost effective control circuitry for a wide bandgap semiconductor junction gated transistor.


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