The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 24, 2010
Filed:
Nov. 15, 2005
Takashi Udagawa, Chichibu, JP;
Takashi Udagawa, Chichibu, JP;
Showa Denko K.K., Tokyo, JP;
Abstract
A gallium nitride-based semiconductor stacked structure includes a single crystal substrate, a low-temperature buffer layer grown at a low temperature in a region contiguous to the single crystal substrate and a gallium nitride-based semiconductor layer overlying the low-temperature buffer layer. The low-temperature buffer layer possesses therein a single crystal layer formed of a hexagonal AlGaN-based Group III nitride material containing gallium predominantly over aluminum, wherein 0.5<γ≦1 and X+γ=1. The single crystal layer has crystal defects at a smaller density on a (10-10) crystal face than on a (11-20) crystal face. A method for production of the gallium nitride-based semiconductor stacked structure is also disclosed.