The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 24, 2010
Filed:
Nov. 30, 2005
Tadashi Chiba, Tokyo, JP;
Tadashi Chiba, Tokyo, JP;
Oki Semiconductor Co., Ltd., Tokyo, JP;
Abstract
An SOI semiconductor device has a substrate, an insulation film, a silicon film, a gate insulation film, a gate electrode, a pair of first diffusion regions, a first region, and a second diffusion region. The insulation film is formed on the substrate. The silicon film is formed on the insulation film. The gate insulation film is formed on the silicon film. The gate electrode is formed on the gate insulation film. The pair of first diffusion regions is formed in the silicon film while sandwiches the under part of the gate electrode in between. The first region is sandwiched by a pair of the first diffusion regions. The second diffusion region contacts with the first region while adjoins one of the first regions and has the same conductivity type with the first region.