The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 24, 2010
Filed:
Jul. 06, 2006
Applicant:
Kazutoshi Izumi, Kawasaki, JP;
Inventor:
Kazutoshi Izumi, Kawasaki, JP;
Assignee:
Fujitsu Semiconductor Limited, Yokohama, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/94 (2006.01);
U.S. Cl.
CPC ...
Abstract
After forming an interlayer insulating film () covering a ferroelectric capacitor, a hydrogen diffusion preventing film (), an etching stopper () and an interlayer insulating film () are formed. Then, a wiring having a tantalum nitride (TaN) film () (barrier metal film) and a copper (Cu) film () is formed in the interlayer insulating film () by a single damascene method. Thereafter, a wiring having a copper film () and a wiring having a copper film () and the like are formed by a dual damascene method.