The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 24, 2010
Filed:
Feb. 22, 2007
Mitsuhiko Sakai, Kyoto, JP;
Tadahiro Okazaki, Kyoto, JP;
Ken Nakahara, Kyoto, JP;
Rohm Co., Ltd., Kyoto, JP;
Abstract
In a semiconductor light emitting element, a p-type layer (), an active layer () and an n-type layer () are laminated on a substrate in this order. The n-type layer () is formed with a rectangular n-side electrode () whose width in one direction is equal to that of the n-type layer (). The thickness t of the n-type layer () satisfies Formula 1 below. The semiconductor light emitting element includes a side surface () extending in the lamination direction and formed with a plurality of projections (). Supposing that the wavelength of the light from the active-layer () is λ and the index of refraction of the n-type layer () or the p-type layer () is n, the average Wof widths at bottoms of the projections is set to satisfy W≧λ/n.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile