The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 24, 2010
Filed:
Mar. 08, 2005
Takaki Yasuda, Chiba, JP;
Hideki Tomozawa, Chiba, JP;
Takaki Yasuda, Chiba, JP;
Hideki Tomozawa, Chiba, JP;
Showa Denko K.K., Tokyo, JP;
Abstract
A pn junction type Group III nitride semiconductor light-emitting device() of the present invention has a light-emitting layerof multiple quantum well structure in which well layersand barrier layersincluding Group III nitride semiconductors are alternately stacked periodically between an n-type clad layerand a p-type clad layerwhich are formed on a crystal substrate and which include Group III nitride semiconductors, in which one end layerof the light-emitting layeris closest to and opposed to the n-type clad layer, and the other end layerof the light-emitting layeris closest to and opposed to the p-type clad layer, both the one and the other end layers are barrier layers, and the other end layeris thicker than the barrier layer of the one end layer.