The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 24, 2010

Filed:

Sep. 12, 2005
Applicant:

Maria Op DE Beeck, Heverlee, BE;

Inventor:

Maria Op de Beeck, Heverlee, BE;

Assignee:

IMEC, Leuven, BE;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/469 (2006.01); G03F 1/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

In the present invention, a BARC stack comprising at least a first BARC layer and at least a second BARC layer is optimized for reducing substrate reflectivity in lithographic processing applications. The first BARC layer is positioned adjacent the resist layer, while the second BARC layer is positioned adjacent the first BARC layer. The optical parameters of the first BARC layer are determined to be slightly different from the optical parameters of the resist, thus resulting in a small optical step at the interface resist/first BARC. Furthermore, the second BARC may be selected to have optical parameters such that the optical step at the interface first BARC/second BARC is slightly larger but still relatively small compared to the optical step between resist and substrate. The thicknesses for the BARC layers can be determined from substrate reflectivity calculations. The latter allows obtaining a low substrate reflectivity for various pitches in a pattern to be printed.


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