The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 24, 2010
Filed:
Jun. 29, 2007
SA RO Han Park, Gwangjin-gu, KR;
Sa Ro Han Park, Gwangjin-gu, KR;
Hynix Semiconductor Inc., Icheon-si, KR;
Abstract
A method of manufacturing a semiconductor device according to the invention is an effective technique for ensuring a sufficient process margin and enabling the formation of a fine pattern in a peripheral circuit region. The method includes forming an anti-reflective layer with a varying thickness in a peripheral circuit region and a cell region, and then over-etching the anti-reflective layer in the peripheral circuit region. The method is capable of improving the data processing speed of a semiconductor device and therefore increases the device efficiency.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile