The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 24, 2010
Filed:
Jul. 13, 2006
Jamal Ramdani, Scarborough, ME (US);
Craig Printy, Buxton, ME (US);
Steven J. Adler, Cape Elizabeth, ME (US);
Andre P. Labonte, Lewiston, ME (US);
Jamal Ramdani, Scarborough, ME (US);
Craig Printy, Buxton, ME (US);
Steven J. Adler, Cape Elizabeth, ME (US);
Andre P. Labonte, Lewiston, ME (US);
National Semiconductor Corporation, Santa Clara, CA (US);
Abstract
A system and method is disclosed for manufacturing a bipolar junction transistor that comprises an emitter/base layer that is formed by a single deposition process. In one advantageous embodiment of the invention the emitter/base layer comprises an emitter layer that comprises an epitaxially grown mono-silicon emitter. The epitaxially grown mono-silicon emitter significantly reduces the electrical resistivity of the emitter. A non-dopant impurity such as germanium is added to the base layer to endpoint a dry plasma etch process that is applied to etch the emitter/base layer.