The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 24, 2010
Filed:
Dec. 10, 2009
Shiue-lung Chen, Taoyuan, TW;
Jeng-kuo Feng, Taoyuan, TW;
Ching-hwa Chang Jean, Taoyuan, TW;
Jang-ho Chen, Taoyuan, TW;
Shiue-Lung Chen, Taoyuan, TW;
Jeng-Kuo Feng, Taoyuan, TW;
Ching-Hwa Chang Jean, Taoyuan, TW;
Jang-Ho Chen, Taoyuan, TW;
Walsin Lihwa Corporation, Taoyuan, TW;
Abstract
A method of forming a vertical structure light emitting diode with a heat exhaustion structure, comprising the steps of: providing a sapphire substrate; producing a number of recesses on the sapphire substrate, each of which has a depth of p; forming a buffer layer having a number of protrusions, each of which has a height of q smaller than p so that when the protrusions of the buffer layer are accommodated within the recesses of the sapphire substrate, a number of gaps are formed therebetween for heat exhaustion; growing a number of luminescent layers on the buffer layer, having a medium layer formed between the luminescent layers and the buffer layer; etching through the luminescent layers and the buffer layer to form a duct for heat exhaustion; removing the sapphire substrate by excimer laser lift-off (LLO); roughening the medium layer; and depositing electrodes on the roughened medium layer.