The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 24, 2010
Filed:
Nov. 23, 2006
Christophe Constancias, Grenoble, FR;
Christophe Constancias, Grenoble, FR;
Abstract
The invention relates to extreme ultraviolet photolithography masks operating in reflection. These masks comprise a lower mirror () covering a substrate (), and absorbent zones formed on the lower mirror in an etched pattern that defines the pattern to be reproduced. According to the invention, the absorbent zones are formed by resonant Fabry-Pérot cavities exhibiting a strong absorption peak for the operating wavelength. The cavities are formed by the lower mirror (), an upper mirror () and, between the mirrors, a transparent medium, the thickness of which is calculated so as to produce an absorption peak at the operating wavelength. The medium may be formed from silicon () or by a superposition of a thin silicon oxide layer (forming a buffer layer to facilitate etching) and a silicon layer.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile