The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 24, 2010
Filed:
Feb. 27, 2007
Tetsuo Tsuchiya, Ibaraki, JP;
Susumu Mizuta, Ibaraki, JP;
Yuriko Mizuta, Legal Representative, Tokyo, JP;
Toshiya Kumagai, Ibaraki, JP;
Toshihito Sasaki, Tokyo, JP;
Seiji Kurashina, Tokyo, JP;
Tetsuo Tsuchiya, Ibaraki, JP;
Susumu Mizuta, Ibaraki, JP;
Yuriko Mizuta, legal representative, Tokyo, JP;
Toshiya Kumagai, Ibaraki, JP;
Toshihito Sasaki, Tokyo, JP;
Seiji Kurashina, Tokyo, JP;
National Institute of Advanced Industrial Science and Technology, Tokyo, JP;
NEC Corporation, Tokyo, JP;
Abstract
An infrared sensor manufacturing method according to this invention includes a step of forming a bridge structure of an insulating material on an Si substrate, a step of forming a vanadium oxide thin film on the bridge structure by a dry film forming method, a step of irradiating laser light onto the vanadium oxide thin film to thereby change material properties thereof, a step of forming the vanadium oxide thin film with the changed material properties into a bolometer resistor having a predetermined pattern, and a step of forming a protective layer of an insulating material so as to cover the bolometer resistor having the predetermined pattern and the bridge structure.