The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 17, 2010
Filed:
Apr. 11, 2005
Christian Karnutsch, Karlsruhe, DE;
Norbert Linder, Lappersdorf, DE;
Wolfgang Schmid, Deuerling/Hillohe, DE;
Christian Karnutsch, Karlsruhe, DE;
Norbert Linder, Lappersdorf, DE;
Wolfgang Schmid, Deuerling/Hillohe, DE;
Osram Opto Semiconductors GmbH, Regensburg, DE;
Abstract
A semiconductor device comprising an optically pumped vertical emitter having an active vertical emitter layer (), and a pump radiation source, which is used to generate a pump radiation field which propagates in the lateral direction and optically pumps the vertical emitter layer () in a pump region, the wavelength of the pump radiation field being smaller than the wavelength of the radiation field () generated by the vertical emitter. The pump radiation source has an active pump layer (), which is arranged downstream of the vertical emitter layer () in the vertical direction and which at least partly overlaps the vertical emitter layer as seen in the vertical direction, the active pump layer () being arranged in such a way that the pump radiation field generated during operation has a higher power than a parasitic laterally propagating radiation field generated by the vertical emitter layer () or that the generation of a parasitic laterally propagating radiation field by the vertical emitter layer () is suppressed.