The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 17, 2010
Filed:
Jul. 29, 2008
Applicants:
Kwang-ii Park, Yongin-si, KR;
Young-hyun Jun, Seoul, KR;
Seong-jin Jang, Seongnam-si, KR;
Ho-young Song, Hwaseong-si, KR;
Inventors:
Kwang-II Park, Yongin-si, KR;
Young-Hyun Jun, Seoul, KR;
Seong-Jin Jang, Seongnam-si, KR;
Ho-Young Song, Hwaseong-si, KR;
Assignee:
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 7/00 (2006.01);
U.S. Cl.
CPC ...
Abstract
A latency signal generating method and a corresponding semiconductor memory device, among other things, are disclosed. Such a method includes: receiving a clock signal for the semiconductor memory device; receiving a mode characterization signal; providing the DQS; and adapting the duration of a preamble state of the DQS according to the mode characterization signal to promote conformance of a strobe state of the DQS with the clock signal.