The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 17, 2010

Filed:

Nov. 13, 2007
Applicants:

Keun-bong Lee, Yongin-si, KR;

Jung-hyeon Kim, Hwaseong-si, KR;

Inventors:

Keun-Bong Lee, Yongin-si, KR;

Jung-Hyeon Kim, Hwaseong-si, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01G 4/005 (2006.01); H01G 4/06 (2006.01);
U.S. Cl.
CPC ...
Abstract

In a capacitor structure and a method of manufacturing the capacitor structure, first and second conductive patterns are formed on a substrate. The first and second conductive patterns extend in a first direction. The first and second conductive patterns are alternately arranged to be spaced apart from one another in a second direction substantially perpendicular to the first direction. An insulating interlayer is formed on the substrate to cover the first and second conductive patterns. Third and fourth conductive patterns extending in a third direction lying at an angle of between about 0° and about 90° relative to the first direction are formed on the insulating interlayer. The third and fourth conductive patterns are alternately arranged to be spaced apart from one another in a fourth direction substantially perpendicular to the third direction.


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