The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 17, 2010

Filed:

Jul. 24, 2007
Applicants:

Kelly Jill Tornquist Hennig, Torrance, CA (US);

Patty Pei-ling Chang-chien, Redondo Beach, CA (US);

Xianglin Zeng, Monterey Park, CA (US);

Jeffrey Ming-jer Yang, Cerritos, CA (US);

Inventors:

Kelly Jill Tornquist Hennig, Torrance, CA (US);

Patty Pei-Ling Chang-Chien, Redondo Beach, CA (US);

Xianglin Zeng, Monterey Park, CA (US);

Jeffrey Ming-Jer Yang, Cerritos, CA (US);

Assignee:

Northrop Grumman Systems Corporation, Los Angeles, CA (US);

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/20 (2006.01);
U.S. Cl.
CPC ...
Abstract

A wafer-level package that employs one or more integrated hydrogen getters within the wafer-level package on a substrate wafer or a cover wafer. The hydrogen getters are provided between and among the integrated circuits on the substrate wafer or the cover wafer, and are deposited during the integrated circuit fabrication process. In one non-limiting embodiment, the substrate wafer is a group III-V semiconductor material, and the hydrogen getter includes a titanium layer, a nickel layer, and a palladium layer.


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