The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 17, 2010

Filed:

Jul. 02, 2008
Applicants:

Motonari Katsuno, Kyoto, JP;

Ryohei Miyagawa, Kyoto, JP;

Inventors:

Motonari Katsuno, Kyoto, JP;

Ryohei Miyagawa, Kyoto, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 33/00 (2010.01); H01L 21/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

A solid-state imaging device includes: an imaging area in which light receiving portions are disposed; an interconnect layer disposed on the light receiving portions, the interconnect layer including metal interconnects having openings and first insulating films; inner-layer lenses formed over the interconnect layer in one-to-one relationship with the light receiving portions; a transparent second insulating film formed on the interconnect layer and the inner-layer lenses; top lenses formed on the second insulating film in one-to-one relationship with the light receiving portions, an upper face of each of the top lenses being a convexly curved face; and a transparent film on the top lenses, the transparent film being formed of a material having a refractive index smaller than a refractive index of the top lenses. In this way, a focal point of at least part of incident light can be situated above a semiconductor substrate.


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