The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 17, 2010
Filed:
Feb. 14, 2007
Vishnu K. Khemka, Phoenix, AZ (US);
Amitava Bose, Tempe, AZ (US);
Todd C. Roggenbauer, Chandler, AZ (US);
Ronghua Zhu, Chandler, AZ (US);
Vishnu K. Khemka, Phoenix, AZ (US);
Amitava Bose, Tempe, AZ (US);
Todd C. Roggenbauer, Chandler, AZ (US);
Ronghua Zhu, Chandler, AZ (US);
Freescale Semiconductor, Inc., Austin, TX (US);
Abstract
A low leakage bipolar Schottky diode () is formed by parallel lightly doped N () and P () regions adapted to form superjunction regions. First ends of the P regions () are terminated by P+ layers () and second, opposed ends of the N regions () are terminated by N+ layers (). Silicide layers () are provided in contact with both ends of the parallel N and P regions (), thereby forming at the first end ohmic contacts () with the P+ regions () and Schottky contacts () with the N regions) and at the second, opposite end, ohmic contacts () with the N+ regions () and Schottky contacts () with the P regions (). When forward biased current flows in both N () and P () regions thereby reducing the forward drop. When reverse biased, a substantial portion of the voltage is dropped across the lightly doped N () and P () superjunction regions, thereby significantly reducing the reverse leakage.