The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 17, 2010
Filed:
Sep. 27, 2001
Susumu Nishimura, Tottori, JP;
Shoji Honda, Tottori, JP;
Koji Ueyama, Tottori, JP;
Sanyo Electric Co., Ltd., Osaka, JP;
Tottori Sanyo Electric Co., Ltd., Tottori, JP;
Abstract
A light-receiving element has a photodiode formed in part of the top surface of a semiconductor substrate so as to function as a light-receiving region, and has a light-emitting element mount electrode formed on top of the semiconductor substrate where the light-receiving region is not formed. A high concentration impurity layer is formed below the top surface of the semiconductor substrate along the peripheral edges of the light-emitting element mount electrode. This helps prevent the voltage applied to the light-emitting element mount electrode from influencing the output of the light-receiving element. Alternatively, a photonic semiconductor device has a light-emitting element and a light-receiving element, and has the light-receiving region of the light-receiving element formed parallel to the direction in which the light-emitting element emits light. The light-emitting element is arranged so that, when viewed in a plan view, the light-emitting point thereof overlaps with at least part of the light-receiving region. This permits easy fitting of the light-emitting element even with a low light-emitting point, and thus helps reduce variation in light reception sensitivity.