The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 17, 2010
Filed:
Jan. 26, 2007
Jong-wook Park, Seoul, KR;
Hyun-jung Kim, Kyunggi-do, KR;
Kab-keun Kim, Kyunggi-do, KR;
Doo-hee Yoon, Kyunggi-do, KR;
Jong-wook Park, Seoul, KR;
Hyun-jung Kim, Kyunggi-do, KR;
Kab-keun Kim, Kyunggi-do, KR;
Doo-hee Yoon, Kyunggi-do, KR;
Biopol Co., Ltd., Kyunggi-do, KR;
Abstract
The present invention relates to a polyurethane foam dressing material with improved moisturizing rate. More precisely, the present invention relates to a hydrophilic dressing material in which a wound contact layer () having a sponge structure composed of multiple open cells () and pores () passing through the cells () is laminated with a protective film (). The lamination is characteristically performed at 150˜250° C. under a pressure of preferably 0.25˜1 kgf/cm, the moisturizing rate of the wound contact layer () is 300˜1200% and the pore area (membrane opening) takes 10˜35% of the total cell area. The polyurethane foam dressing material of the present invention prevents the invasion of foreign materials, releases absorbed exudation after changing it into water vapor or arresting the absorbed exudation inside the foam to maintain constant moisturizing, has excellent exudation absorption capacity, has a wound healing effect resulting from not adhering to a wound, is easy to change, and enhances the wound healing effect by maintaining optimum moisturizing conditions resulting from the improved moisturizing rate.