The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 17, 2010
Filed:
Oct. 11, 2006
Applicants:
Yoshihiro Uozumi, Yokohama, JP;
Kazuhiko Takase, Yokohama, JP;
Tsuyoshi Matsumura, Hiratsuka, JP;
Inventors:
Assignee:
Kabushiki Kaisha Toshiba, Tokyo, JP;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/302 (2006.01); H01L 21/461 (2006.01);
U.S. Cl.
CPC ...
Abstract
This disclosure is concerned a method of manufacturing a semiconductor device which includes providing an dielectric film on a substrate; providing a mask material on the dielectric film; etching the dielectric film using the mask material; performing a first treatment of removing a metal residue generated by etching the dielectric film; performing a second treatment of making a sidewall of the dielectric film formed by etching the dielectric film hydrophobic; and performing a third treatment of removing a silicon residue generated by etching the dielectric film.