The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 17, 2010
Filed:
Jun. 26, 2007
Applicant:
Seo Min Kim, Seoul, KR;
Inventor:
Seo Min Kim, Seoul, KR;
Assignee:
Hynix Semiconductor Inc., Icheon-si, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/311 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method for forming a pattern in a semiconductor device includes performing a double exposure process for a multifunctional hard mask layer over a semiconductor substrate using a line/space mask to form a multifunctional hard mask layer pattern having a first contact hole region. The multifunctional hard mask layer pattern is subjected to a resist flow process to form a multifunctional hard mask layer pattern having a second contact hole region with rounded edges, where the size of the second contact hole region is smaller than that of the first contact hole region.