The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 17, 2010
Filed:
Feb. 09, 2007
Applicants:
Nicolas Loubet, Grenoble, FR;
Didier Dutartre, Meylan, FR;
Alexandre Talbot, Grenoble, FR;
Laurent Rubaldo, Fontaine, FR;
Inventors:
Nicolas Loubet, Grenoble, FR;
Didier Dutartre, Meylan, FR;
Alexandre Talbot, Grenoble, FR;
Laurent Rubaldo, Fontaine, FR;
Assignee:
STMicroelectronics S.A., Montrouge, FR;
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/302 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method for selectively etching single-crystal silicon-germanium in the presence of single-crystal silicon, including a chemical etch based on hydrochloric acid in gaseous phase at a temperature lower than approximately 700° C.