The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 17, 2010
Filed:
Jul. 29, 2005
Applicants:
Ho Lee, Gyeonggi-do, KR;
Dongsuk Shin, Youngin-si, KR;
Tetsuji Ueno, Suwon-si, KR;
Seung-hwan Lee, Seoul, KR;
Hwa-sung Rhee, Seongnam-si, KR;
Inventors:
Ho Lee, Gyeonggi-do, KR;
DongSuk Shin, Youngin-si, KR;
Tetsuji Ueno, Suwon-si, KR;
Seung-Hwan Lee, Seoul, KR;
Hwa-Sung Rhee, Seongnam-si, KR;
Assignee:
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/322 (2006.01);
U.S. Cl.
CPC ...
Abstract
In an example embodiment of the method of manufacturing an epitaxial semiconductor substrate, a gettering layer is grown over a semiconductor substrate. An epitaxial layer may then be formed over the gettering layer, and a semiconductor device may be formed on the epitaxial layer.