The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 17, 2010
Filed:
Aug. 12, 2008
Alessandro C. Callegari, Yorktown Heights, NY (US);
Michael A. Gribelyuk, Stamford, CT (US);
Vijay Narayanan, New York, NY (US);
Vamsi K. Paruchuri, New York, NY (US);
Sufi Zafar, Briarcliff Manor, NY (US);
Alessandro C. Callegari, Yorktown Heights, NY (US);
Michael A. Gribelyuk, Stamford, CT (US);
Vijay Narayanan, New York, NY (US);
Vamsi K. Paruchuri, New York, NY (US);
Sufi Zafar, Briarcliff Manor, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A compound metal comprising MONwhich is a p-type metal having a workfunction of about 4.75 to about 5.3, preferably about 5, eV that is thermally stable on a gate stack comprising a high k dielectric and an interfacial layer is provided as well as a method of fabricating the MONcompound metal. Furthermore, the MONmetal compound of the present invention is a very efficient oxygen diffusion barrier at 1000° C. allowing very aggressive equivalent oxide thickness (EOT) and inversion layer thickness scaling below 14 Å in a p-metal oxide semiconductor (pMOS) device. In the above formula, M is a metal selected from Group IVB, VB, VIB or VIIB of the Periodic Table of Elements, x is from about 5 to about 40 atomic % and y is from about 5 to about 40 atomic %.