The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 17, 2010
Filed:
Sep. 27, 2007
Kenya Kobayashi, Kanagawa, JP;
Hideo Yamamoto, Kanagawa, JP;
Atsushi Kaneko, Kanagawa, JP;
Yoshimitsu Murase, Kanagawa, JP;
Kenya Kobayashi, Kanagawa, JP;
Hideo Yamamoto, Kanagawa, JP;
Atsushi Kaneko, Kanagawa, JP;
Yoshimitsu Murase, Kanagawa, JP;
NEC Electronics Corporation, Kawasaki, Kanagawa, JP;
Abstract
A method of manufacturing a semiconductor apparatus includes forming a trench in a semiconductor layer, forming a gate electrode inside the trench, forming a thermally-oxidized film on the gate electrode inside the trench, forming a silicate glass film on the thermally-oxidized film inside the trench, forming a body region inside the semiconductor layer, and forming a source region on the body region. The method provides a semiconductor apparatus having reduced fluctuation of a channel length and low ON-resistance.