The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 7776686 B1

PDF
Full Text
Expired
Date of Patent:
Aug. 17, 2010

Filed:

Mar. 07, 2006
Applicants:

Mariko Makabe, Kanagawa, JP;

Eiji Hasegawa, Kanagawa, JP;

Inventors:

Mariko Makabe, Kanagawa, JP;

Eiji Hasegawa, Kanagawa, JP;

Assignee:

NEC Electronics Corporation, Kawasaki, Kanagawa, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/336 (2006.01);
U.S. Cl.
CPC ...
Abstract

An interpoly insulating film is modified in the film quality, while preventing generation of trap sites. A floating gateis provided on a channel-forming region in the vicinity of the surface of a silicon substrate, an interpoly insulating filmis provided so as to contact with the floating gate, and a control gateis provided so as to contact with the interpoly insulating filmand so as to be opposed to at least a part of the floating gate. A process step of providing the interpoly insulating filmfurther includes a step of forming on the floating gate, the interpoly insulating filmso as to contact with the floating gate, and a step of exposing, subsequently to the formation of the interpoly insulating film, the interpoly insulating filmto an atmosphere containing a nitrogen-containing gas and oxygen, to thereby simultaneously proceed nitriding and oxidation of the interpoly insulating film


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