The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 17, 2010
Filed:
Feb. 07, 2007
Tomoo Izumi, Toyonaka, JP;
Jun Yamada, Ibaraki, JP;
Tomoo Izumi, Toyonaka, JP;
Jun Yamada, Ibaraki, JP;
Konica Minolta Holdings, Inc., Tokyo, JP;
Abstract
A method of manufacturing a low-cost thin film transistor of minimized variations in performances, as well as the thin film transistor produced thereby. A thin film transistor manufacturing method including the steps of: forming a gate electrode on a substrate; forming a gate insulation layer on the gate electrode; forming a semiconductor layer by coating the gate insulation layer with a semiconductor material; forming a repellent layer having an electrode material-repellent characteristic on the semiconductor layer; applying light from the surface of the substrate where there is no gate electrode, thereby removing the semiconductor layer and the repellent layer by sublimation, except for the portion protected against light by the gate electrode; and dropping the fluid electrode material on the repellent layer remaining on the substrate so that the fluid electrode material is separated by the repellent layer, whereby the source electrode and the drain electrode are formed.