The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 17, 2010
Filed:
Apr. 25, 2006
Applicant:
Tao Wang, Sheffield, GB;
Inventor:
Tao Wang, Sheffield, GB;
Assignee:
CAO Group, Inc., West Jordan, UT (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method for reducing dislocation density between an AlGaN layer and a sapphire substrate involving the step of forming a self-organizing porous AlN layer of non-coalescing column-like islands with flat tops on the substrate.
Quick Actions:
Wang, Tao. (2010). Method for significant reduction of dislocations for a very high a1 composition a1gan layer (U.S. Patent No. 7776636). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7776636
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