The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 17, 2010
Filed:
Jul. 05, 2006
In-sik Han, Daegu, KR;
Jae-young Lee, Daegu, KR;
Jae-young Kim, Gumi-si, KR;
Tae-hak Park, Gumi-si, KR;
So-yeon Kwon, Busan, KR;
In-Sik Han, Daegu, KR;
Jae-Young Lee, Daegu, KR;
Jae-Young Kim, Gumi-si, KR;
Tae-Hak Park, Gumi-si, KR;
So-Yeon Kwon, Busan, KR;
Kolon Industries, Inc., Kwacheon-si, KR;
Abstract
Disclosed are wholly aromatic polyamide filament and a method of manufacturing the same, characterized in that, in the process of preparing the wholly aromatic polyamide polymer, the aromatic diamine, aromatic diacid chloride and polymerization solvent put into the reactorare agitated by an agitation device which is installed in the reactorand consists of: (i) a rotordriven by a motorand having a plurality of pins; and (ii) a statorhaving a plurality of pins, wherein spin speed of the rotoris controlled to 10 to 100 times of both of feeding rates for the aromatic diacid chloride and the aromatic diamine in the polymerization solvent into the reactor and, at the same time, contact frequency between the pinsand the pinsis regulated within a range of 100 to 1,000 Hz. The present invention is effective to progress uniform and homogeneous polymerization over all of area of a polymerization reactor, thereby reducing deviation in degree of polymerization, since polymeric monomers are miscible and react together very well in the reactor. Accordingly, the wholly aromatic polyamide filament produced exhibits narrow PDI and lowered paracrystalline parameter gleading to reduction of defects of a crystal itself, so as to considerably improve strength and modulus thereof.