The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 17, 2010
Filed:
Oct. 03, 2007
Yukio Taniguchi, Yokohama, JP;
Masakiyo Matsumura, Yokohama, JP;
Yukio Taniguchi, Yokohama, JP;
Masakiyo Matsumura, Yokohama, JP;
Advanced LCD Technologies Development Center Co., Ltd., Totsuka-ku, JP;
Abstract
A crystallization method which generates a crystallized semiconductor film by irradiating at least one of a polycrystal semiconductor film and an amorphous semiconductor film with light beams having a light intensity distribution with an inverse peak pattern that a light intensity is increased toward the periphery from an inverse peak at which the light intensity is minimum, wherein a light intensity value α (standardized value) in the inverse peak when a maximum value of the light intensity in the light intensity distribution with the inverse peak pattern is standardized as 1 is set to 0.2≦value α≦0.8.