The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 10, 2010
Filed:
Mar. 30, 2005
Yasuyuki Bessho, Hirakata, JP;
Masayuki Hata, Kadoma, JP;
Daijiro Inoue, Kyoto, JP;
Tsutomu Yamaguchi, Nara, JP;
Yasuyuki Bessho, Hirakata, JP;
Masayuki Hata, Kadoma, JP;
Daijiro Inoue, Kyoto, JP;
Tsutomu Yamaguchi, Nara, JP;
Sanyo Electric Co., Ltd., Osaka, JP;
Abstract
A blue-violet semiconductor laser device has a first p-electrode formed on its upper surface and a first n-electrode formed on its lower surface. A red semiconductor laser device has a second n-electrode formed on its upper surface and a second p-electrode formed on its lower surface. An infrared semiconductor laser device has a third n-electrode formed on its upper surface and a third p-electrode formed on its lower surface. Solder films are partially formed on the upper surface of the first p-electrode in the blue-violet semiconductor laser device. Two of the solder films are formed with a predetermined distance between them on the upper surface of the first p-electrode. This results in a portion of the first p-electrode being exposed. The first, second and third p-electrodes of the blue-violet semiconductor laser device, red semiconductor laser device, and infrared semiconductor laser device are common electrodes.