The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 10, 2010
Filed:
Sep. 28, 2007
Motoi Takahashi, Kawasaki, JP;
Ikuto Fukuoka, Kawasaki, JP;
Motoi Takahashi, Kawasaki, JP;
Ikuto Fukuoka, Kawasaki, JP;
Fujitsu Semiconductor Limited, Yokohama, JP;
Abstract
A nonvolatile semiconductor memory that improved a read rate. In a memory cell array in which each memory cell includes two storage areas, thresholds of outer storage areas of two memory cells which are symmetrical with respect to two adjacent bit lines are set so as to create a pair relation between them. A word line selection circuit applies read voltage to a word line to which the two memory cells to be read are connected. A bit line selection circuit applies ground voltage to two bit lines just outside the two memory cells and applies predetermined read voltage to two bit lines inside the two memory cells. A read conversion circuit compares drain currents which run through the two memory cells activated by the word line selection circuit and the bit line selection circuit, and converts the drain currents into data.