The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 10, 2010
Filed:
Jul. 02, 2008
Hidetaka Tsuji, Yokohama, JP;
Tomoji Takada, Kawasaki, JP;
Hidetaka Tsuji, Yokohama, JP;
Tomoji Takada, Kawasaki, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
A semiconductor memory device includes first memory cell transistors, a memory block, and word lines. Each of the first memory cell transistors has a stacked gate including a charge accumulation layer and a control gate and is capable of holding M bits (M≠2, where i is a natural number and M is a natural number greater than or equal to 3) of data. The memory block includes the first memory cell transistors and is erase unit of the data. The data held in the first memory cell transistors included in the memory block is erased simultaneously. The size of data the memory block is capable of holding is L bits (L=2, where k is a natural number). The word lines connect in common the control gates of the first memory cell transistors.