The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 10, 2010

Filed:

Nov. 11, 2008
Applicants:

Lieh-chiu Lin, Kaoshiung, TW;

Shyh-shyuan Sheu, Taichung, TW;

Pei-chia Chiang, Taipei, TW;

Wen-pin Lin, Dacun, TW;

Inventors:

Lieh-Chiu Lin, Kaoshiung, TW;

Shyh-Shyuan Sheu, Taichung, TW;

Pei-Chia Chiang, Taipei, TW;

Wen-Pin Lin, Dacun, TW;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

A phase change memory wherein several phase change storage elements are coupled in series to share a single current source. The current provided by the current source is directed by a plurality of switches. To write/read the phase change storage elements, the invention provides techniques to control the current value generated by the current source and controls the states of the switches. The impedance summation of the phase change storage elements vary with the data stored therein.


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Lin, Lieh-Chiu. (2010). Phase change memory and control method thereof (U.S. Patent No. 7773411). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7773411

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