The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 10, 2010

Filed:

Mar. 03, 2008
Applicants:

Kensuke Morita, Haibara-gun, JP;

Koji Wariishi, Haibara-gun, JP;

Akira Asano, Haibara-gun, JP;

Makoto Muramatsu, Haibara-gun, JP;

Inventors:

Kensuke Morita, Haibara-gun, JP;

Koji Wariishi, Haibara-gun, JP;

Akira Asano, Haibara-gun, JP;

Makoto Muramatsu, Haibara-gun, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/053 (2006.01); H01L 23/141 (2006.01);
U.S. Cl.
CPC ...
Abstract

An insulating film for semiconductor devices is obtained by curing, on a substrate, a high molecular compound obtained by polymerizing a cage-type silsesquioxane compound having two or more unsaturated groups as substituents and having a cyclic siloxane structure, wherein the structure of the cage-type silsesquioxane compound is not broken by curing, and the breakage of the cage structure can be detected by observing a peak at approximately 610 cmin Raman spectrum of the film after curing.


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