The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 10, 2010
Filed:
Oct. 02, 2006
Applicants:
Shigeo Tooi, Tokyo, JP;
Tetsujiro Tsunoda, Tokyo, JP;
Inventors:
Shigeo Tooi, Tokyo, JP;
Tetsujiro Tsunoda, Tokyo, JP;
Assignee:
Mitsubishi Electric Corporation, Tokyo, JP;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/93 (2006.01);
U.S. Cl.
CPC ...
Abstract
Second diffusion layers to be guard rings of a second conductivity type are formed on the major surface of a semiconductor substrate of a first conductivity type in a guard ring region. An insulating film is formed on these second diffusion layers. The semiconductor device has a structure wherein a conductive film is formed on the insulating film between adjacent electrodes among a first surface electrode, second surface electrodes, and a third surface electrode.