The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 10, 2010
Filed:
Sep. 12, 2007
Tony Ivanov, Summerfield, NC (US);
Julio Costa, Summerfield, NC (US);
Michael Carroll, Jamestown, NC (US);
Thomas Gregory Mckay, Boulder Creek, CA (US);
Christian Rye Iversen, Vestbjerg, DK;
Tony Ivanov, Summerfield, NC (US);
Julio Costa, Summerfield, NC (US);
Michael Carroll, Jamestown, NC (US);
Thomas Gregory McKay, Boulder Creek, CA (US);
Christian Rye Iversen, Vestbjerg, DK;
RF Micro Devices, Inc., Greensboro, NC (US);
Abstract
The present invention includes a silicon-on-insulator (SOI) wafer that enhances certain performance parameters by increasing silicon device layer and insulator layer thicknesses and increasing silicon handle wafer resistivity. By increasing the silicon device layer thickness, effects of the floating body problem may be significantly reduced. By increasing the insulator layer thickness and the silicon handle wafer resistivity, influences from the silicon handle wafer on devices formed using the silicon device layer may be significantly reduced. As a result, standard tools, methods, and processes may be used.