The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 10, 2010
Filed:
Dec. 29, 2004
Applicant:
Wensheng Wang, Kawasaki, JP;
Inventor:
Wensheng Wang, Kawasaki, JP;
Assignee:
Fujitsu Microelectronics Limited, Yokohama, JP;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/41 (2006.01); H01L 29/43 (2006.01);
U.S. Cl.
CPC ...
Abstract
A lower electrode film is formed above a semiconductor substrate first, and then a ferroelectric film is formed on the lower electrode film. After that, an upper electrode film is formed on the ferroelectric film. When forming the upper electrode, an IrOfilm containing crystallized small crystals when formed is formed on the ferroelectric film first, and then an IrOfilm containing columnar crystals is formed.