The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 10, 2010
Filed:
Jun. 28, 2006
Won-je Park, Gyeonggi-do, KR;
Won-Je Park, Gyeonggi-do, KR;
Abstract
Image sensor devices are provided having reduced dark current generation characteristics. These image sensor devices include a semiconductor substrate and a photo-detector therein (e.g., P-N photodiode). The photo-detector includes a charge-generating region therein that is configured to convert photons received by the photo-detector into charge carriers. A first transistor, which has a terminal configured to receive the charge carriers generated by the photo-detector, is also provided. The first transistor includes a first gate electrode and a first pair of lightly doped source and drain regions of unequal width on opposite sides of the first gate electrode. This first transistor may be a three-terminal device and the terminal that is configured to receive the charge carriers may be selected from a group consisting of a gate, source and drain terminals. In particular, the first transistor may be configured as a reset transistor or as a source-follower transistor.