The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 10, 2010

Filed:

Jun. 28, 2007
Applicants:

Kenji Gomikawa, Yokohama, JP;

Mitsuhiro Noguchi, Yokohama, JP;

Takashi Aoi, Yokohama, JP;

Inventors:

Kenji Gomikawa, Yokohama, JP;

Mitsuhiro Noguchi, Yokohama, JP;

Takashi Aoi, Yokohama, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/76 (2006.01);
U.S. Cl.
CPC ...
Abstract

A semiconductor memory device includes a memory cell block. The memory cell block includes a plurality of n-type first MIS transistors with current passages connected in series. Each of the first MIS transistors includes a source, a drain, and a charge storage layer formed on a (001)-plane of a semiconductor substrate with a gate insulating film interposed therebetween and is configured to store data. A direction from the source to the drain in each of the first MIS transistors is set parallel to a [001]-direction or [010]-direction of the semiconductor substrate.


Find Patent Forward Citations

Gomikawa, Kenji. (2010). Semiconductor storage device comprising mis transistor including charge storage layer (U.S. Patent No. 7772618). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7772618

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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