The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 10, 2010
Filed:
Mar. 30, 2006
Maximilian Fleischer, Höhenkirchen, DE;
Hans Meixner, Haar, DE;
Uwe Lampe, Buxtehude, DE;
Roland Pohle, Herdweg, DE;
Ralf Schneider, München, DE;
Elfriede Simon, München, DE;
Maximilian Fleischer, Höhenkirchen, DE;
Hans Meixner, Haar, DE;
Uwe Lampe, Buxtehude, DE;
Roland Pohle, Herdweg, DE;
Ralf Schneider, München, DE;
Elfriede Simon, München, DE;
Micronas GmbH, Freiburg, DE;
Abstract
A gas sensitive field effect transistor comprises a semiconductor substrate that includes a capacitance well, and source and drain regions of a field effect transistor. A gate of the field effect transistor is separated from the semiconductor substrate by an insulator, and a gas sensitive layer separated from the gate by an air gap. The field effect transistor provides an output signal indicative of the presence of a target gas within the air gap to an amplifier, which provides an amplified output signal that is electrically coupled to the capacitance well.