The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 7772594 B1

PDF
Full Text
Expired
Date of Patent:
Aug. 10, 2010

Filed:

Sep. 06, 2005
Applicants:

Yoshitaka Sugawara, Osaka, JP;

Yoshikazu Shoji, Tokyo, JP;

Inventors:

Yoshitaka Sugawara, Osaka, JP;

Yoshikazu Shoji, Tokyo, JP;

Assignees:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/12 (2006.01); C08G 77/12 (2006.01); C08G 77/20 (2006.01);
U.S. Cl.
CPC ...
Abstract

The outer surface of a wide-gap semiconductor device is coated with a synthetic polymer compound containing one or more silicon-containing polymer having a bridged structure formed by a siloxane (Si—O—Si bond structure). The synthetic polymer compound may include, for example, a silicon-containing polymer which has one or more reactive groups (A') selected from Si—R, Si—O—Rand Si—R—OCOC(R)═CH, has a bridged structure formed by an Si—O—Si bond in one or more locations, and contains components having weight average molecular weights of not more than 1000 in an amount of 20% or less by weight.


Find Patent Forward Citations

Sugawara, Yoshitaka. (2010). High-heat-resistive semiconductor device (U.S. Patent No. 7772594). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7772594

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