The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 10, 2010
Filed:
Aug. 08, 2006
Katsumi Kishino, Tokyo, JP;
Ichiro Nomura, Tokyo, JP;
Koshi Tamamura, Tokyo, JP;
Hitoshi Nakamura, Hachioji, JP;
Katsumi Kishino, Tokyo, JP;
Ichiro Nomura, Tokyo, JP;
Koshi Tamamura, Tokyo, JP;
Hitoshi Nakamura, Hachioji, JP;
Abstract
The present invention aims at providing a structure in which a high p-type carrier concentration of 1×10cmor more is obtained in a material in which, although it shows normally p-type conductivity, a carrier concentration smaller than 1×10cmis only obtained. Also, the present invention aims at providing highly reliable semiconductor element and device each of which has excellent characteristics such as light emitting characteristics and a long lifetime. Each specific layer, i.e., each ZnSeTelayer (2 ML) is inserted between host layers, i.e., MgZnCdSe layers (each having 10 ML (atomic layer) thickness) each of which is lattice matched to an InP substrate. In this case, each specific layer in which a sufficient carrier concentration of 1×10cmor more is obtained when a single layer is inserted at suitable intervals. As a result, a sufficient hole concentration of 1×10cmor more is obtained in the overall crystal in a material in which a hole concentration smaller than 1×10cmhas been only conventionally obtained.